Walton Electronics Co., Ltd.
Shenzhen Walton Electronics Co., Ltd.
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TK30E06N1,S1X Discrete Semiconductors Transistors MOSFET Through Hole
. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
| MOSFET | |
| RoHS: | Details |
| Si | |
| Through Hole | |
| TO-220-3 | |
| N-Channel | |
| 1 Channel | |
| 60 V | |
| 43 A | |
| 15 mOhms | |
| - 20 V, + 20 V | |
| 2 V | |
| 16 nC | |
| - 55 C | |
| + 150 C | |
| 53 W | |
| Enhancement | |
| U-MOSVIII-H | |
| Tube | |
| Configuration: | Single |
| Height: | 15.1 mm |
| Length: | 10.16 mm |
| Product Type: | MOSFET |
| Series: | TK30E06N1 |
| Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Width: | 4.45 mm |
| Unit Weight: | 0.068784 oz |