Walton Electronics Co., Ltd.
Shenzhen Walton Electronics Co., Ltd.
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MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage
FEATURES BENEFITS
• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design
• Improves reliability by replacing battery-backed SRAM
• 3.3 Volt power supply
• Fast 35 ns read/write cycle
• SRAM compatible timing
• Native non-volatility
• Unlimited read & write endurance
• Data always non-volatile for >20 years at temperature
• Commercial and industrial temperatures
• All products meet MSL-3 moisture sensitivity level
• RoHS-Compliant TSOP2 and BGA packages
BENEFITS
• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design
• Improves reliability by replacing battery-backed SRAM
| Product Category: | MRAM |
| TSOP-44 | |
| Parallel | |
| 1 Mbit | |
| 128 k x 8 | |
| 8 bit | |
| 35 ns | |
| 3 V | |
| 3.6 V | |
| 55 mA | |
| - 40 C | |
| + 85 C | |
| MR0A08B | |
| Tray | |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Product Type: | MRAM |
| 135 | |
| Subcategory: | Memory & Data Storage |
| Unit Weight: | 0.178707 oz |