Walton Electronics Co., Ltd.
Shenzhen Walton Electronics Co., Ltd.
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MT47H128M16RT-25E-C Original DRAM DDR2 2G 128MX16 FBGA Data Storage
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 t CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
| DRAM | |
| RoHS: | Details |
| SDRAM - DDR2 | |
| SMD/SMT | |
| FBGA-84 | |
| 16 bit | |
| 128 M x 16 | |
| 2 Gbit | |
| 800 MHz | |
| 400 ps | |
| 1.9 V | |
| 1.7 V | |
| 105 mA | |
| 0 C | |
| + 85 C | |
| MT47H | |
| Tray | |
| Brand: | Original in stock |
| Moisture Sensitive: | Yes |
| Product Type: | DRAM |
| Factory Pack Quantity: | 1260 |
| Subcategory: | Memory & Data Storage |
