MRF9045LR1Transistors RF Bipolar Transistors Si original in stock
The ASI MRF9045LR1 is a high voltage, gold-metalized,
laterally diffused metal oxide semiconductor. Ideal for today's
RF power amplifier Applications.
| RF MOSFET Transistors |
| RoHS: | Details |
| N-Channel |
| Si |
| 4.25 A |
| 65 V |
| 945 MHz |
| 18.8 dB |
| 60 W |
| SMD/SMT |
| NI-360 |
| Tray |
| Configuration: | Single |
| Forward Transconductance - Min: | 3 S |
| Pd - Power Dissipation: | 117 W |
| Product Type: | RF MOSFET Transistors |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | 15 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.8 V |
| Unit Weight: | 0.032480 oz |
Typical Two•
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
−
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
−
Channel Enhancement
−
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
−
signal, common
−
source amplifier applica-
tions in 28 volt base station equipment.
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No
